onsemi Single FETs, MOSFETs MTD6P10E

P-Channel 100V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK

TRANSISTOR 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3, FET General Purpose Power Product overview: MTD6P10E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 6 A, 100 V, 0.66 ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6 A, 100 V, 0.66 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTD6P10E can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1081057-MTD6P10E
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 840pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 660 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance