onsemi Single FETs, MOSFETs MTD6P10E

Description
P-Channel 100V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
P-Channel 100V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK
Request a Quote Datasheet

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Single FETs, MOSFETs - MTD6P10EOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTD6P10EOS-ND
Single FETs, MOSFETs MTD6P10EOS-ND
P-Channel 100V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK

P-Channel 100V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6P10E - 1081057-MTD6P10E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6P10E
1081057-MTD6P10E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6P10E 1081057-MTD6P10E
Manufacturer: ON Semiconductor Win Source Part Number: 1081057-MTD6P10E Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 840pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 660 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1081057-MTD6P10E
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 840pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 660 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MTD6P10EOS-ND 1081057-MTD6P10E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6P10E
Polarity P-Channel P-Channel; P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK-3
V(BR)DSS 100 volts
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