onsemi Single FETs, MOSFETs MTD6N20ET4G

Description
MOSFET N-CH 200V 6A DPAK
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Description
MOSFET N-CH 200V 6A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTD6N20ET4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MTD6N20ET4G
Single FETs, MOSFETs MTD6N20ET4G
MOSFET N-CH 200V 6A DPAK

MOSFET N-CH 200V 6A DPAK

Supplier's Site Datasheet
Singapore
N-Channel 200V 6A 700 mOhm MOSFET Transistor
278-MTD6N20ET4G
N-Channel 200V 6A 700 mOhm MOSFET Transistor 278-MTD6N20ET4G
Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: MTD6N20ET4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 6A, 700 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6A, 700 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTD6N20ET4G can be used for catalog matching and distributor lookup.

Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: MTD6N20ET4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 6A, 700 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6A, 700 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTD6N20ET4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4G - 129355-MTD6N20ET4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4G
129355-MTD6N20ET4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4G 129355-MTD6N20ET4G
Manufacturer: ON Semiconductor Win Source Part Number: 129355-MTD6N20ET4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Family Name: MTD6N20E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 700 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): STD5N20-1; STD5N20; STD5N20T4; STD5N20L; Introduction Date: June 12, 1996 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 129355-MTD6N20ET4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Family Name: MTD6N20E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 700 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): STD5N20-1; STD5N20; STD5N20T4; STD5N20L;
Introduction Date: June 12, 1996
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - MTD6N20ET4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTD6N20ET4GOSTR-ND
Single FETs, MOSFETs MTD6N20ET4GOSTR-ND
N-Channel 200V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK

N-Channel 200V 6A (Tc) 1.75W (Ta), 50W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD6N20ET4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTD6N20ET4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTD6N20ET4G
MOSFET N-CH 200V 6A DPAK

MOSFET N-CH 200V 6A DPAK

Supplier's Site
N Channel Mosfet, 200V, 6A, D-Pak; Channel Type Onsemi - 45J1711 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 6A, D-Pak; Channel Type Onsemi
45J1711
N Channel Mosfet, 200V, 6A, D-Pak; Channel Type Onsemi 45J1711
N CHANNEL MOSFET, 200V, 6A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 6A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MTD6N20ET4G 278-MTD6N20ET4G 129355-MTD6N20ET4G MTD6N20ET4GOSTR-ND MTD6N20ET4G 45J1711
Product Name Single FETs, MOSFETs N-Channel 200V 6A 700 mOhm MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 200V, 6A, D-Pak; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 6000 milliamps 6000 milliamps
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