onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4 MTD6N20ET4

Description
Manufacturer: ON Semiconductor Win Source Part Number: 112600-MTD6N20ET4 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 700 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 112600-MTD6N20ET4 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 700 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4 - 112600-MTD6N20ET4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4
112600-MTD6N20ET4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4 112600-MTD6N20ET4
Manufacturer: ON Semiconductor Win Source Part Number: 112600-MTD6N20ET4 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.75W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 700 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 112600-MTD6N20ET4
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 700 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD6N20ET4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTD6N20ET4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTD6N20ET4
MOSFET N-CH 200V 6A DPAK

MOSFET N-CH 200V 6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 112600-MTD6N20ET4 MTD6N20ET4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N20ET4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 1750 to 50000 milliwatts
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