onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N15T4 MTD6N15T4

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1081056-MTD6N15T4 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 300 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N15T4 - 1081056-MTD6N15T4 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD6N15T4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1081056-MTD6N15T4 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 300 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N15T4 - 1081056-MTD6N15T4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N15T4
1081056-MTD6N15T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N15T4 1081056-MTD6N15T4
Manufacturer: ON Semiconductor Win Source Part Number: 1081056-MTD6N15T4 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 300 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1081056-MTD6N15T4
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTD6N15T4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTD6N15T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTD6N15T4
MOSFET N-CH 150V 6A DPAK

MOSFET N-CH 150V 6A DPAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1081056-MTD6N15T4 MTD6N15T4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD6N15T4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 150 volts
PD 1250 to 20000 milliwatts
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