onsemi Single FETs, MOSFETs MTD5P06VT4G

Description
P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTD5P06VT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTD5P06VT4GOSTR-ND
Single FETs, MOSFETs MTD5P06VT4GOSTR-ND
P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount DPAK

P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD5P06VT4G - 127835-MTD5P06VT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD5P06VT4G
127835-MTD5P06VT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD5P06VT4G 127835-MTD5P06VT4G
Manufacturer: ON Semiconductor Win Source Part Number: 127835-MTD5P06VT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 450 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 127835-MTD5P06VT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 450 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
P Channel Mosfet, -60V, 5A, D-Pak; Channel Type Onsemi - 54K4911 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 5A, D-Pak; Channel Type Onsemi
54K4911
P Channel Mosfet, -60V, 5A, D-Pak; Channel Type Onsemi 54K4911
P CHANNEL MOSFET, -60V, 5A, D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 5A, D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

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Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number MTD5P06VT4GOSTR-ND 127835-MTD5P06VT4G 54K4911
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD5P06VT4G P Channel Mosfet, -60V, 5A, D-Pak; Channel Type Onsemi
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK-3 TO-3
V(BR)DSS 60 volts
PD 2100 to 40000 milliwatts
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