onsemi Transistor MTB3N100E

Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 1000V, 4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK SMD. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 1000V, 4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK SMD. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 99977960 - Radwell International
Willingboro, NJ, United States
Transistor
99977960
Transistor 99977960
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 1000V, 4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK SMD. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 1000V, 4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK SMD. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 99977960
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

40V 195A MOSFET Transistor - 278-AUIRFB8407 - ERSAELECTRONICS PTE. LTD.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
View Details
5 suppliers
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor - T1G2028536-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-780
Power Gain 19 dB
View Details
2 suppliers
GaAs Fet Switches - KS200 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details