onsemi Single FETs, MOSFETs MTB23P06VT4

Description
P-Channel 60V 23A (Ta) 3W (Ta), 90W (Tc) Surface Mount D²PAK
Request a Quote Datasheet
Description
P-Channel 60V 23A (Ta) 3W (Ta), 90W (Tc) Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTB23P06VT4OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTB23P06VT4OS-ND
Single FETs, MOSFETs MTB23P06VT4OS-ND
P-Channel 60V 23A (Ta) 3W (Ta), 90W (Tc) Surface Mount D²PAK

P-Channel 60V 23A (Ta) 3W (Ta), 90W (Tc) Surface Mount D²PAK

Buy Now Datasheet
Singapore
P-Channel 23A 60V 0.12ohm MOSFET Transistor
278-MTB23P06VT4
P-Channel 23A 60V 0.12ohm MOSFET Transistor 278-MTB23P06VT4
23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 Product overview: MTB23P06VT4 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 23A, 60V, 0.12ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 23A, 60V, 0.12ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTB23P06VT4 can be used for catalog matching and distributor lookup.

23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 Product overview: MTB23P06VT4 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 23A, 60V, 0.12ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 23A, 60V, 0.12ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTB23P06VT4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTB23P06VT4 - 208909-MTB23P06VT4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTB23P06VT4
208909-MTB23P06VT4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTB23P06VT4 208909-MTB23P06VT4
Manufacturer: ON Semiconductor Win Source Part Number: 208909-MTB23P06VT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1620pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 120 mOhm @ 11.5A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 208909-MTB23P06VT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta), 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1620pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 11.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 46359060 - Radwell International
Willingboro, NJ, United States
Transistor
46359060
Transistor 46359060
TRANSISTOR 23AMP 60V 3PIN. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR 23AMP 60V 3PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTB23P06VT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTB23P06VT4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTB23P06VT4
MOSFET P-CH 60V 23A D2PAK

MOSFET P-CH 60V 23A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number MTB23P06VT4OS-ND 278-MTB23P06VT4 208909-MTB23P06VT4 46359060 MTB23P06VT4
Product Name Single FETs, MOSFETs P-Channel 23A 60V 0.12ohm MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTB23P06VT4 Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 90000 milliwatts 3000 to 90000 milliwatts
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