Manufacturer: ON Semiconductor
Win Source Part Number: 808998-MSRD620CTT4RG
Packaging: Reel
Mounting Style: SMD
Speed: Fast Recovery = 200mA (Io)
Diode Type: Standard
Reverse Recovery Time (trr): 75ns
Operating Temperature - Junction: -55°C ~ 175°C
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Maximum): 200V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Voltage - Forward (Vf) (Maximum) at If: 1.15V at 3A
Current - Reverse Leakage at Vr: 1μA at 200V
Part Number Series: MSRD620CT
200 V, 6.0 A Reverse Polarity Power Rectifier
Diode Array 1 Pair Common Anode Standard 200V 3A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
DIODE ARRAY GP 200V 3A DPAK
DIODE ARRAY GP 200V 3A DPAK
Rectifiers Ultra Fast Recovery Rectifier 3A 75ns
RECTIFIER, 200V, 6A, TO-252; Repetitive Peak Reverse Voltage:200V; Average Forward Current:6A; Diode Configuration:Dual Common Anode; Forward Voltage Max:1.3V; Reverse Recovery Time:75ns; Forward Surge Current:45A; No. of Pins:3 Pin RoHS Compliant: Yes
DIODE ARRAY GP 200V 3A DPAK
| Win Source Electronics | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Diode Arrays | Rectifiers | Diode Arrays | Rectifiers | Rectifiers | Rectifiers |
| Product Number | 808998-MSRD620CTT4RG | MSRD620CTT4RG | 488-MSRD620CTT4RGTR-ND | MSRD620CTT4RG | 79R3481 | MSRD620CTT4RG |
| Product Name | Diodes, Rectifiers - Arrays - MSRD620CTT4RG | Diode Arrays | Rectifiers | Rectifier, 200V, 6A, To-252; Repetitive Peak Reverse Voltage Onsemi | Discrete Semiconductor Products - Diodes - Rectifiers | |
| Diode Type | Step-Recovery Diode; Standard | |||||
| VF | 1.15 volts | 1.3 volts | 1.15 volts | |||
| VR | 200 volts | |||||
| IR | 1.00E-3 mA | |||||
| Tj | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |