NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL Product overview: MSD602-RT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSD602-RT1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59
Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59
Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59
Manufacturer: ON Semiconductor
Win Source Part Number: 097735-MSD602-RT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 600mV @ 30mA, 300mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 150mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
TRANS NPN 50V 0.5A SC59
BIPOLAR TRANSISTOR, NPN, 50V; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:500mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
TRANS, NPN, 50V, 0.5A, 0.2W, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:40hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT SS GP XSTR NPN 25V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-MSD602-RT1G | MSD602-RT1GOSCT-ND | 097735-MSD602-RT1G | MSD602-RT1G | 67H6950 | 07AH4397 | MSD602-RT1G |
| Product Name | Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MSD602-RT1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 50V; Transistor Polarity Onsemi | Trans, Npn, 50V, 0.5A, 0.2W, Sc-59; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | NPN; NPN | NPN | NPN | ||
| IC(max) | 500 milliamps | 500 milliamps | 500 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| VCBO | 60 volts | ||||||
| PD | 200 milliwatts | 200 milliwatts |
