onsemi Single Bipolar Transistors MSD601-ST1G

Description
Bipolar (BJT) Transistor NPN 50V 100mA 200mW Surface Mount SC-59
  • Single Bipolar Transistors - MSD601-ST1GOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MSD601-ST1G - 1079917-MSD601-ST1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MSD601-ST1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 100mA 200mW Surface Mount SC-59
Request a Quote Datasheet

Suppliers

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Product
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Single Bipolar Transistors - MSD601-ST1GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MSD601-ST1GOS-ND
Single Bipolar Transistors MSD601-ST1GOS-ND
Bipolar (BJT) Transistor NPN 50V 100mA 200mW Surface Mount SC-59

Bipolar (BJT) Transistor NPN 50V 100mA 200mW Surface Mount SC-59

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MSD601-ST1G - 1079917-MSD601-ST1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MSD601-ST1G
1079917-MSD601-ST1G
TRANSISTORS - Transistors (BJT) - Single - MSD601-ST1G 1079917-MSD601-ST1G
Manufacturer: ON Semiconductor Win Source Part Number: 1079917-MSD601-ST1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 290 @ 2mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1079917-MSD601-ST1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 290 @ 2mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MSD601-ST1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MSD601-ST1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MSD601-ST1G
TRANS NPN 50V 0.1A SC59

TRANS NPN 50V 0.1A SC59

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MSD601-ST1GOS-ND 1079917-MSD601-ST1G MSD601-ST1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MSD601-ST1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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