onsemi Dual Bipolar Transistor MSB710-RT1G

Description
Dual PNP Bipolar Transistor, SC-59 3 LEAD, 3000-REEL Product overview: MSB710-RT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSB710-RT1G can be used for catalog matching and distributor lookup.
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Description
Dual PNP Bipolar Transistor, SC-59 3 LEAD, 3000-REEL Product overview: MSB710-RT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSB710-RT1G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
Dual Bipolar Transistor
276-MSB710-RT1G
Dual Bipolar Transistor 276-MSB710-RT1G
Dual PNP Bipolar Transistor, SC-59 3 LEAD, 3000-REEL Product overview: MSB710-RT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSB710-RT1G can be used for catalog matching and distributor lookup.

Dual PNP Bipolar Transistor, SC-59 3 LEAD, 3000-REEL Product overview: MSB710-RT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSB710-RT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MSB710-RT1G - 059548-MSB710-RT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MSB710-RT1G
059548-MSB710-RT1G
TRANSISTORS - Transistors (BJT) - Single - MSB710-RT1G 059548-MSB710-RT1G
Manufacturer: ON Semiconductor Win Source Part Number: 059548-MSB710-RT1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SC-59 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 600mV @ 30mA, 300mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 150mA, 10V Maximum Power Dissipation: 200mW

Manufacturer: ON Semiconductor
Win Source Part Number: 059548-MSB710-RT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 600mV @ 30mA, 300mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 150mA, 10V
Maximum Power Dissipation: 200mW

Buy Now Datasheet
Single Bipolar Transistors - MSB710-RT1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MSB710-RT1G-ND
Single Bipolar Transistors MSB710-RT1G-ND
Bipolar (BJT) Transistor PNP 50V 500mA 200mW Surface Mount SC-59

Bipolar (BJT) Transistor PNP 50V 500mA 200mW Surface Mount SC-59

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MSB710-RT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MSB710-RT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MSB710-RT1G
TRANS PNP 50V 0.5A SC59

TRANS PNP 50V 0.5A SC59

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 276-MSB710-RT1G 059548-MSB710-RT1G MSB710-RT1G-ND MSB710-RT1G
Product Name Dual Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - MSB710-RT1G Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP PNP
IC(max) 1.00E-4 milliamps 500 milliamps
VCEO 50 volts 50 volts
VCBO -50 volts
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