onsemi TRANSISTORS - Transistors (BJT) - Single - MSA1162YT1G MSA1162YT1G

Manufacturer: ON Semiconductor
Win Source Part Number: 059545-MSA1162YT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 120 @ 2mA, 6V
Maximum Power Dissipation: 200mW

Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 200mW Surface Mount SC-59

PNP Bipolar Transistor hFE 120 to 240, SC-59 3 LEAD, 3000-REEL Product overview: MSA1162YT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSA1162YT1G can be used for catalog matching and distributor lookup.