Manufacturer: ON Semiconductor
Win Source Part Number: 024372-MSA1162GT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 200mW
PNP BJT 50V 100mA 80MHz SC-59 Transistor Product overview: MSA1162GT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 80MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 80MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MSA1162GT1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 200mW Surface Mount SC-59
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 200mW Surface Mount SC-59
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 200mW Surface Mount SC-59
Bipolar Transistors - BJT 100mA 60V PNP
TRANS PNP 50V 0.1A SC59
BIPOLAR TRANSISTOR, PNP, -50V; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:100mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:80MHz RoHS Compliant: Yes
TRANSISTOR, AEC-Q101, PNP, -50V, SC-59; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:80MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 024372-MSA1162GT1G | 276-MSA1162GT1G | MSA1162GT1GOSDKR-ND | MSA1162GT1G | MSA1162GT1G | 45J1694 | 13AC3674 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MSA1162GT1G | 50V 100mA 80MHz Bipolar Transistor | Single Bipolar Transistors | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Pnp, -50V; Transistor Polarity Onsemi | Transistor, Aec-Q101, Pnp, -50V, Sc-59; Transistor Polarity Onsemi |
| Polarity | PNP; PNP | PNP | PNP | PNP | PNP | ||
| Package Type | SOT3; SC-59 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| VCBO | 60 volts |
