The MPSW51 is a PNP silicon bipolar transistor designed for high current applications, packaged in a TO-92 (TO-226) 1 WATT case with straight or bent leads. It has a collector-emitter voltage rating of -30 V, a collector-base voltage rating of -40 V, and a continuous collector current of -1000 mA. The device dissipates up to 1.0 W at 25°C ambient temperature with a thermal resistance from junction-to-ambient of 125 °C/W. Operating and storage junction temperature ranges from -55°C to +150°C. The transistor has a DC current gain (hFE) of 55 minimum at 10 mA collector current and 50 minimum at 1000 mA, with a collector-emitter saturation voltage of 0.7 V maximum at 1000 mA collector and 100 mA base current. The transition frequency is 50 MHz. The device is RoHS compliant and Pb-free.
Win Source Part Number: 1379227-MPSW51
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Bulk
Product Status: Obsolete
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Product Number: MPSW51
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 50MHz
Power - Max: 1 W
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1379227-MPSW51 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors |
| Polarity | PNP |
