onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors MPSW51

Description
Win Source Part Number: 1379227-MPSW51 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Base Product Number: MPSW51 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 50MHz Power - Max: 1 W
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Description
Win Source Part Number: 1379227-MPSW51 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Base Product Number: MPSW51 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 50MHz Power - Max: 1 W
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1379227-MPSW51 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1379227-MPSW51
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1379227-MPSW51
Win Source Part Number: 1379227-MPSW51 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Base Product Number: MPSW51 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 50MHz Power - Max: 1 W

Win Source Part Number: 1379227-MPSW51
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Bulk
Product Status: Obsolete
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Product Number: MPSW51
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 50MHz
Power - Max: 1 W

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1379227-MPSW51
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Polarity PNP
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