onsemi Single Bipolar Transistors MPSW13RLRA

Description
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 125MHz 1W Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 125MHz 1W Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MPSW13RLRA-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPSW13RLRA-ND
Single Bipolar Transistors MPSW13RLRA-ND
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 125MHz 1W Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN - Darlington 30V 1A 125MHz 1W Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1379223-MPSW13RLRA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1379223-MPSW13RLRA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1379223-MPSW13RLRA
Win Source Part Number: 1379223-MPSW13RLRA Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92 (TO-226) Base Product Number: MPSW13 Mounting Type: Through Hole HTSUS: 8541.29.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 125MHz Power - Max: 1 W

Win Source Part Number: 1379223-MPSW13RLRA
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Product Status: Obsolete
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Base Product Number: MPSW13
Mounting Type: Through Hole
HTSUS: 8541.29.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 125MHz
Power - Max: 1 W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSW13RLRA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSW13RLRA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSW13RLRA
TRANS NPN DARL 30V 1A TO92

TRANS NPN DARL 30V 1A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MPSW13RLRA-ND 1379223-MPSW13RLRA MPSW13RLRA
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Unlock Full Specs
to access all available technical data