onsemi Single Bipolar Transistors MPSW06G

Description
Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
  • Single Bipolar Transistors - MPSW06GOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MPSW06G - 041789-MPSW06G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSW06G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - MPSW06GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPSW06GOS-ND
Single Bipolar Transistors MPSW06GOS-ND
Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MPSW06G - 041789-MPSW06G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MPSW06G
041789-MPSW06G
TRANSISTORS - Transistors (BJT) - Single - MPSW06G 041789-MPSW06G
Manufacturer: ON Semiconductor Win Source Part Number: 041789-MPSW06G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 400mV @ 10mA, 250mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 250mA, 1V Maximum Power Dissipation: 1W

Manufacturer: ON Semiconductor
Win Source Part Number: 041789-MPSW06G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 400mV @ 10mA, 250mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 250mA, 1V
Maximum Power Dissipation: 1W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSW06G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSW06G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSW06G
TRANS NPN 80V 0.5A TO92

TRANS NPN 80V 0.5A TO92

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MPSW06GOS-ND 041789-MPSW06G MPSW06G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MPSW06G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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