onsemi Single Bipolar Transistors MPSW06

Description
Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MPSW06OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPSW06OS-ND
Single Bipolar Transistors MPSW06OS-ND
Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1379222-MPSW06 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1379222-MPSW06
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1379222-MPSW06
Win Source Part Number: 1379222-MPSW06 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 45 pct. Mfr: Fairchild Semiconductor Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Mounting Type: Through Hole HTSUS: 8541.29.0075 ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 50MHz Power - Max: 1 W

Win Source Part Number: 1379222-MPSW06
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 45 pct.
Mfr: Fairchild Semiconductor
Package: Bulk
Product Status: Obsolete
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
HTSUS: 8541.29.0075
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 50MHz
Power - Max: 1 W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSW06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSW06
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSW06
TRANS NPN 80V 0.5A TO92

TRANS NPN 80V 0.5A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MPSW06OS-ND 1379222-MPSW06 MPSW06
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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