onsemi Single Bipolar Transistors MPSA14

Description
Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MPSA14OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPSA14OS-ND
Single Bipolar Transistors MPSA14OS-ND
Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MPSA14 - 104460-MPSA14 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MPSA14
104460-MPSA14
TRANSISTORS - Transistors (BJT) - Single - MPSA14 104460-MPSA14
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 104460-MPSA14 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 125MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.5V @ 100μA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 20000 @ 100mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 5k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 104460-MPSA14
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 125MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 20000 @ 100mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs

Buy Now Datasheet
Single Bipolar Transistors - MPSA14 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MPSA14
Single Bipolar Transistors MPSA14
TRANS NPN DARL 30V 0.5A TO92

TRANS NPN DARL 30V 0.5A TO92

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSA14 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSA14
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSA14
TRANS NPN DARL 30V 0.5A TO92

TRANS NPN DARL 30V 0.5A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MPSA14OS-ND 104460-MPSA14 MPSA14 MPSA14
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MPSA14 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington NPN - Darlington; NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 Long Body
IC(max) 500 milliamps 500 milliamps
VCEO 30 volts 30 volts
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