onsemi Single Bipolar Transistors MPSA10

Description
Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625mW Through Hole TO-92-3
  • Single Bipolar Transistors - MPSA10-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MPSA10 - 110244-MPSA10 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSA10 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MPSA10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPSA10-ND
Single Bipolar Transistors MPSA10-ND
Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MPSA10 - 110244-MPSA10 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MPSA10
110244-MPSA10
TRANSISTORS - Transistors (BJT) - Single - MPSA10 110244-MPSA10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 110244-MPSA10 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 125MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 5μA, 10V Maximum Power Dissipation: 625mW

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 110244-MPSA10
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 125MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 5μA, 10V
Maximum Power Dissipation: 625mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPSA10 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPSA10
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPSA10
TRANS NPN 40V 0.1A TO92-3

TRANS NPN 40V 0.1A TO92-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MPSA10-ND 110244-MPSA10 MPSA10
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MPSA10 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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