onsemi Single Bipolar Transistors MPS6652G

Description
Bipolar (BJT) Transistor PNP 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - MPS6652GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPS6652GOS-ND
Single Bipolar Transistors MPS6652GOS-ND
Bipolar (BJT) Transistor PNP 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor PNP 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MPS6652G - 789362-MPS6652G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MPS6652G
789362-MPS6652G
TRANSISTORS - Transistors (BJT) - Single - MPS6652G 789362-MPS6652G
Manufacturer: ON Semiconductor Win Source Part Number: 789362-MPS6652G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 625mW Transistor Type: PNP Frequency - Transition: 100MHz Part Status: Obsolete(EOL) Family Name: MPS6652 Categories: Discrete Semiconductor Products Manufacturer Package: TO-92-3 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 40V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V Alternative Parts (Cross-Reference): 2N4125; 2N3703; ZTX549STOA; ZTX549STOB; Introduction Date: June 24, 1996 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 789362-MPS6652G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 625mW
Transistor Type: PNP
Frequency - Transition: 100MHz
Part Status: Obsolete(EOL)
Family Name: MPS6652
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-92-3
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 40V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Maximum): 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V
Alternative Parts (Cross-Reference): 2N4125; 2N3703; ZTX549STOA; ZTX549STOB;
Introduction Date: June 24, 1996
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPS6652G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPS6652G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPS6652G
TRANS PNP 40V 1A TO92

TRANS PNP 40V 1A TO92

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MPS6652GOS-ND 789362-MPS6652G MPS6652G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MPS6652G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-4 milliamps 1000 milliamps
Power Gain 50 dB
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