onsemi Single Bipolar Transistors MPS6602

Description
Bipolar (BJT) Transistor NPN 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MPS6602OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPS6602OS-ND
Single Bipolar Transistors MPS6602OS-ND
Bipolar (BJT) Transistor NPN 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 40V 1A 100MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MPS6602 - 789360-MPS6602 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MPS6602
789360-MPS6602
TRANSISTORS - Transistors (BJT) - Single - MPS6602 789360-MPS6602
Manufacturer: ON Semiconductor Win Source Part Number: 789360-MPS6602 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 625mW Transistor Type: NPN Frequency - Transition: 100MHz Part Status: Obsolete(EOL) Family Name: MPS6602 Categories: Discrete Semiconductor Products Manufacturer Package: TO-92-3 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 40V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V Alternative Parts (Cross-Reference): BC338-16 B1G; BC338-40 A1; BC338-40 B1G; BC338-25 B1G; Introduction Date: June 24, 1996 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 789360-MPS6602
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 625mW
Transistor Type: NPN
Frequency - Transition: 100MHz
Part Status: Obsolete(EOL)
Family Name: MPS6602
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-92-3
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 40V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Maximum): 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V
Alternative Parts (Cross-Reference): BC338-16 B1G; BC338-40 A1; BC338-40 B1G; BC338-25 B1G;
Introduction Date: June 24, 1996
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPS6602 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPS6602
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPS6602
TRANS NPN 40V 1A TO92

TRANS NPN 40V 1A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MPS6602OS-ND 789360-MPS6602 MPS6602
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MPS6602 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-4 milliamps 1000 milliamps
Power Gain 50 dB
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