onsemi TRANSISTORS - Transistors (BJT) - Single - MPS6601 MPS6601

Description
Manufacturer: ON Semiconductor Win Source Part Number: 789359-MPS6601 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 625mW Transistor Type: NPN Frequency - Transition: 100MHz Part Status: Obsolete(EOL) Family Name: MPS6601 Categories: Discrete Semiconductor Products Manufacturer Package: TO-92-3 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 25V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V Alternative Parts (Cross-Reference): BC338-16 A1; BC338-40 B1G; BC338-16 B1G; Introduction Date: June 24, 1996 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 789359-MPS6601 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 625mW Transistor Type: NPN Frequency - Transition: 100MHz Part Status: Obsolete(EOL) Family Name: MPS6601 Categories: Discrete Semiconductor Products Manufacturer Package: TO-92-3 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 25V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V Alternative Parts (Cross-Reference): BC338-16 A1; BC338-40 B1G; BC338-16 B1G; Introduction Date: June 24, 1996 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MPS6601 - 789359-MPS6601 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MPS6601
789359-MPS6601
TRANSISTORS - Transistors (BJT) - Single - MPS6601 789359-MPS6601
Manufacturer: ON Semiconductor Win Source Part Number: 789359-MPS6601 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 625mW Transistor Type: NPN Frequency - Transition: 100MHz Part Status: Obsolete(EOL) Family Name: MPS6601 Categories: Discrete Semiconductor Products Manufacturer Package: TO-92-3 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 25V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V Alternative Parts (Cross-Reference): BC338-16 A1; BC338-40 B1G; BC338-16 B1G; Introduction Date: June 24, 1996 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 789359-MPS6601
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 625mW
Transistor Type: NPN
Frequency - Transition: 100MHz
Part Status: Obsolete(EOL)
Family Name: MPS6601
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-92-3
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 25V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Maximum): 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 1V
Alternative Parts (Cross-Reference): BC338-16 A1; BC338-40 B1G; BC338-16 B1G;
Introduction Date: June 24, 1996
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
Bipolar Transistor
276-MPS6601
Bipolar Transistor 276-MPS6601
Small Signal Amplifier NPN, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: MPS6601 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MPS6601 can be used for catalog matching and distributor lookup.

Small Signal Amplifier NPN, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: MPS6601 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MPS6601 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MPS6601OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MPS6601OS-ND
Single Bipolar Transistors MPS6601OS-ND
Bipolar (BJT) Transistor NPN 25V 1A 100MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 25V 1A 100MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Transistor - 32460590 - Radwell International
Willingboro, NJ, United States
Transistor
32460590
Transistor 32460590
DISCONTINUED BY MANUFACTURER, TRANSISTOR, SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, CASE 29-11, TO-226, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, CASE 29-11, TO-226, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPS6601 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPS6601
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPS6601
TRANS NPN 25V 1A TO92

TRANS NPN 25V 1A TO92

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number 789359-MPS6601 276-MPS6601 MPS6601OS-ND 32460590 MPS6601
Product Name TRANSISTORS - Transistors (BJT) - Single - MPS6601 Bipolar Transistor Single Bipolar Transistors Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-92; SOT3 TO-92; TO-226-3, TO-92-3 Long Body
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-4 milliamps 1000 milliamps 1000 milliamps
Power Gain 50 dB
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