The MPS6560 is an NPN silicon bipolar transistor for signal amplification and switching applications, packaged in a TO-92 case with dimensions of 4.45 to 5.20 mm in height, 4.32 to 5.33 mm in width, and 6.35 mm in lead length. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 500 mA, and a total device dissipation of 625 mW at 25°C ambient temperature. The thermal resistance from junction to ambient is 200 °C/W. DC current gain (hFE) ranges from 35 to 200 depending on collector current. The collector-emitter saturation voltage is 0.5 V at 500 mA collector current and 50 mA base current. The current-gain bandwidth product is 60 MHz. The device operates over a junction temperature range of -55°C to +150°C and is available in Pb-free variants. It meets the TO-92 (TO-226) CASE 29-11 package standard.
MPS6560 Product overview: MPS6560 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MPS6560 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MPS6560 |
| Product Name | Bipolar Transistor |
