onsemi TRANSISTORS - Transistors (BJT) - Single - MPS6521G MPS6521G

Manufacturer: ON Semiconductor
Win Source Part Number: 1079524-MPS6521G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 2mA, 10V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Small Signal Amplifier NPN, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: MPS6521G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MPS6521G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 25V 100mA 625mW Through Hole TO-92 (TO-226)