The MOC8108300 is a phototransistor optocoupler in a black package with VDE approval, consisting of a gallium arsenide infrared emitter coupled with an NPN phototransistor in a dual in-line package. It has a minimum collector-emitter breakdown voltage of 70V, an isolation voltage of 5300 Vac(rms) for 1 minute, and a continuous collector current rating of 50 mA. The current transfer ratio ranges from 250% to 600% at an input current of 10 mA and collector-emitter voltage of 10 V. The device meets UL and VDE safety standards and is designed for applications including power supply regulators, digital logic inputs, and industrial controls.
Optocoupler Phototransistor 70V 5.3kV DIP 100mA Product overview: MOC8108300 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 70V, 5.3kV, 100mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 70V, 5.3kV, 100mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-MOC8108300 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-MOC8108300 |
| Product Name | 70V 5.3kV 100mA DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
