The MOC8107W is a phototransistor optocoupler in a dual in-line package, consisting of a gallium arsenide infrared LED coupled with an NPN silicon phototransistor. It features an isolation voltage of 5300 Vac (rms) for 1 minute and a collector-emitter breakdown voltage of 70 V minimum. The device has a current transfer ratio range of 100 to 300% at an input current of 10 mA and output voltage of 10 V. It meets UL and VDE safety standards, with a white package option (M suffix) and is rated for operating temperatures from -55°C to +100°C. The package dimensions conform to standard 0.4-inch lead spacing.
OPTOISOLATOR 5.3KV TRANS 6-DIP Product overview: MOC8107W from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-MOC8107W can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-MOC8107W |
| Product Name | 5.3KV DIP Bipolar Transistor |
| Package Type | Tube/Rail |
