The MOC8106SR2VM is a 6-pin dual in-line package phototransistor optocoupler consisting of a gallium arsenide infrared emitter coupled to an NPN phototransistor, designed for signal isolation in power supply regulators, microprocessor inputs, and industrial controls. It features a minimum collector-emitter breakdown voltage of 70 V, a maximum working insulation voltage of 850 V peak, and an isolation capacitance of 0.2 pF. The device meets UL1577 and DIN EN/IEC60747-5-5 safety standards, with a creepage and clearance of at least 7 mm and distance through insulation of 0.5 mm. It supports ambient operating temperatures from -40°C to +100°C and is RoHS compliant. The SMT variant has lead bend packaging and is supplied in tape and reel for automated assembly.
6-Pin DIP High BVCEO Phototransistor Output Optocoupler, 1000-REEL Product overview: MOC8106SR2VM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-MOC8106SR2VM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-MOC8106SR2VM |
| Product Name | DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
