The MOC8102 is a phototransistor optocoupler consisting of a gallium arsenide infrared emitter coupled with an NPN phototransistor in a dual in-line package. It has a collector-emitter breakdown voltage of 30 V and a current transfer ratio between 73% and 117% at an input current of 10 mA and collector-emitter voltage of 10 V. The device supports an input forward current of up to 100 mA and a continuous collector current of 50 mA. It meets UL recognized File E90700 and VDE certification requirements. Isolation voltage is 5300 Vac(rms) for one minute in the black package. The maximum operating temperature is 100°C, and the total device power dissipation is 250 mW at 25°C.
1-Ch Phototransistor Optocoupler, 5.3kV Isolation, SMD Product overview: MOC8102SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 5.3kV. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 5.3kV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-MOC8102SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-MOC8102SD |
| Product Name | SMD 5.3kV Bipolar Transistor |
| IC(max) | 50 milliamps |
