The MOC8102 is a phototransistor optocoupler consisting of a gallium arsenide infrared emitter coupled with an NPN phototransistor in a dual in-line package. It provides 30 V collector-emitter breakdown voltage and a current transfer ratio between 73% and 117% at 10 mA forward current. The device supports surface mount mounting with lead spacing of 0.4 inch and meets UL and VDE isolation standards with 5300 Vac (rms) isolation voltage for the black package. Maximum continuous forward current is 100 mA, and collector current is 50 mA. The device operates from -55 °C to +100 °C ambient temperature and conforms to UL 94 V-0 flammability rating.
Phototransistor Optocoupler, 5.3kV Isolation, 30V VCEO, 100mA IF, SMD Product overview: MOC81023SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 5.3kV, 30V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 5.3kV, 30V, 100mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-MOC81023SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-MOC81023SD |
| Product Name | SMD 5.3kV 30V 100mA Bipolar Transistor |
| IC(max) | 50 milliamps |
