The MOC8102300 is a phototransistor optocoupler in a dual in-line package, consisting of a Gallium Arsenide IRED coupled with an NPN phototransistor. It features a collector-emitter breakdown voltage of 30 V, a continuous collector current of 50 mA, and an isolation voltage of 5300 V rms for the black package. The device has a forward current rating of 100 mA for the LED, a collector-emitter saturation voltage specified under test conditions, and a current transfer ratio specified in select groups. It meets UL and VDE recognition standards, with an isolation resistance of 10^11 Ω and an isolation capacitance of 0.5 pF. The operating temperature range is -55°C to +100°C, and the device is rated for 250 mW total power dissipation.
1-CH Optocoupler, 5.3kV Isolation, 100mA Forward Current, DIP Product overview: MOC8102300 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3kV, 100mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3kV, 100mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-MOC8102300 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-MOC8102300 |
| Product Name | 5.3kV 100mA DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
