onsemi Single, Pre-Biased Bipolar Transistors MMUN2241LT1

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - MMUN2241LT1OS-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2241LT1OS-ND
Single, Pre-Biased Bipolar Transistors MMUN2241LT1OS-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2241LT1 - 103423-MMUN2241LT1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2241LT1
103423-MMUN2241LT1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2241LT1 103423-MMUN2241LT1
Manufacturer: ON Semiconductor Win Source Part Number: 103423-MMUN2241LT1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 100k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 246mW

Manufacturer: ON Semiconductor
Win Source Part Number: 103423-MMUN2241LT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 100k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 5mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 246mW

Buy Now Datasheet
 - MMUN2241LT1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Supplier's Site Datasheet
Singapore
100mA 50V Bipolar Transistor
292-MMUN2241LT1
100mA 50V Bipolar Transistor 292-MMUN2241LT1
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN Product overview: MMUN2241LT1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2241LT1 can be used for catalog matching and distributor lookup.

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN Product overview: MMUN2241LT1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2241LT1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMUN2241LT1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMUN2241LT1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMUN2241LT1
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MMUN2241LT1OS-ND 103423-MMUN2241LT1 MMUN2241LT1 292-MMUN2241LT1 MMUN2241LT1
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2241LT1 100mA 50V Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; SOT-23-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)
IC(max) 100 milliamps 100 milliamps
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