Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R Product overview: MMUN2238LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 400mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 400mW, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2238LT1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
NPN Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN 50V SOT23-3
Manufacturer: ON Semiconductor
Win Source Part Number: 106470-MMUN2238LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
BRT TRANSISTOR, 50V, 2.2KOHM, SOT23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:-; No. of Pins:3 PinRoHS Compliant: Yes
TRANS, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 2.2KOHM, SOT-23-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:- RoHS Compliant: Yes
TRANS PREBIAS NPN 50V SOT23-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 292-MMUN2238LT1G | MMUN2238LT1GOSTR-ND | MMUN2238LT1G | MMUN2238LT1G | 106470-MMUN2238LT1G | MMUN2238LT1G | 45J1628 | 30AC9909 | 49X8845 | MMUN2238LT1G |
| Product Name | 50V 100mA 400mW SOT-23 Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2238LT1G | Bipolar Transistors - Pre-Biased | Brt Transistor, 50V, 2.2Kohm, Sot23; Digital Transistor Polarity Onsemi | Trans, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity Onsemi | Brt Transistor, 50V, 2.2Kohm, Sot-23-3; Digital Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | NPN | NPN - Pre-Biased; NPN | NPN; NPN - Pre-Biased | NPN | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||||
| PD | 246 milliwatts | |||||||||
| TJ | -55 C (-67 F) |
