Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2235LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2235LT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1078500-MMUN2235LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
TRANS PREBIAS NPN 0.246W SOT-23
NPN Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN 50V SOT23-3
BRT TRANSISTOR, 50V, 2.2K/47KOHM, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | MMUN2235LT1GOSTR-ND | 292-MMUN2235LT1G | 1078500-MMUN2235LT1G | MMUN2235LT1G | 1841255 | 1841255P | MMUN2235LT1G | MMUN2235LT1G | 49X8842 |
| Product Name | Single, Pre-Biased Bipolar Transistors | SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2235LT1G | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 2.2K/47Kohm, Sot-23; Digital Transistor Polarity Onsemi | |
| Polarity | NPN | NPN; NPN - Pre-Biased | NPN - Pre-Biased; NPN | NPN | NPN | NPN | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; SOT-23 (TO-236) 3 LEAD | TO-3; SOT23 | ||
| IC(max) | 100 milliamps | 100 milliamps | |||||||
| VCEO | 50 volts | 50 volts |
