onsemi MMUN2235LT1

The MMUN2235LT1 is an NPN silicon surface mount transistor with a monolithic bias resistor network, replacing a discrete transistor and external resistors. Housed in the SOT-23 package (3.04 mm × 1.40 mm × 1.02 mm), it has a 50 V collector-emitter voltage rating and 100 mA collector current. Power dissipation is 200 mW at 25°C, derating at 1.6 mW/°C. The integrated resistors are 2.2 kΩ and 47 kΩ. DC current gain ranges from 80 to 140 at VCE = 10 V and IC = 5 mA. Collector-emitter saturation voltage is 0.25 V max at IC = 10 mA and IB = 1 mA. Thermal resistance junction-to-ambient is 625°C/W. The device operates from -65°C to +150°C and is RoHS compliant, supplied in 3000-unit tape and reel.