NPN Digital BJT 50V 100mA SOT-23 Transistor Product overview: MMUN2233LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2233LT1G can be used for catalog matching and distributor lookup.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
TRANS PREBIAS NPN 50V SOT23-3
Manufacturer: ON Semiconductor
Win Source Part Number: 024595-MMUN2233LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Family Name: MMUN2233L
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Alternative Parts (Cross-Reference): DTC143ZCA-TP; DTC143ZCA-TP-HF; MMUN2233L;
Introduction Date: June 05, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23 Digital Transistors ROHS
BRT TRANSISTOR, 50V, 47K/4.7KOHM, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
TRANSISTOR, SMD NPN; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1, SOT-23 RoHS Compliant: Yes
TRANS PREBIAS NPN 50V SOT23-3
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | ODG (Origin Data Global) | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 292-MMUN2233LT1G | MMUN2233LT1G | MMUN2233LT1GOSDKR-ND | MMUN2233LT1G | 024595-MMUN2233LT1G | MMUN2233LT1G | 84K8803 | 83Y4329 | 94W9045 | MMUN2233LT1G |
| Product Name | 50V 100mA SOT-23 Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2233LT1G | Triode/MOS Tube/Transistor >> Digital Transistors | Brt Transistor, 50V, 47K/4.7Kohm, Sot-23; Digital Transistor Polarity Onsemi | Transistor, Smd Npn; Digital Transistor Polarity Onsemi | Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 4.7 Kohm, 47 Kohm, 0.1, Sot-23 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | NPN | NPN - Pre-Biased; NPN | NPN; NPN - Pre-Biased | NPN | NPN | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||||
| PD | 246 milliwatts | |||||||||
| TJ | -55 C (-67 F) |
