onsemi SOT-23 Bipolar Transistor MMUN2230LT1G

Description
NPN Bipolar Digital Transistor (BRT)
Request a Quote Datasheet
Description
NPN Bipolar Digital Transistor (BRT)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MMUN2230LT1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Singapore
SOT-23 Bipolar Transistor
292-MMUN2230LT1G
SOT-23 Bipolar Transistor 292-MMUN2230LT1G
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2230LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2230LT1G can be used for catalog matching and distributor lookup.

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2230LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2230LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2230LT1G - 1225666-MMUN2230LT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2230LT1G
1225666-MMUN2230LT1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2230LT1G 1225666-MMUN2230LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 1225666-MMUN2230LT1G Packaging: Tape and Reel Mounting Style: SMD Transistor Type: NPN - Pre-Biased Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 (TO-236) Status: Obsolete Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Family Part Number: MMUN22**L Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 5mA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 3 at 5mA, 10V Maximum Power: 246mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms

Manufacturer: ON Semiconductor
Win Source Part Number: 1225666-MMUN2230LT1G
Packaging: Tape and Reel
Mounting Style: SMD
Transistor Type: NPN - Pre-Biased
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3 (TO-236)
Status: Obsolete
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Family Part Number: MMUN22**L
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 5mA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 3 at 5mA, 10V
Maximum Power: 246mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms

Buy Now
Single, Pre-Biased Bipolar Transistors - 488-MMUN2230LT1GCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-MMUN2230LT1GCT-ND
Single, Pre-Biased Bipolar Transistors 488-MMUN2230LT1GCT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 488-MMUN2230LT1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-MMUN2230LT1GTR-ND
Single, Pre-Biased Bipolar Transistors 488-MMUN2230LT1GTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 488-MMUN2230LT1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-MMUN2230LT1GDKR-ND
Single, Pre-Biased Bipolar Transistors 488-MMUN2230LT1GDKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MMUN2230LT1G
Bipolar Transistors - Pre-Biased MMUN2230LT1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Buy Now
Brt Transistor, 50V, 1K/1Kohm, Sot-23-3; Digital Transistor Polarity Onsemi - 26K4614 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 1K/1Kohm, Sot-23-3; Digital Transistor Polarity Onsemi
26K4614
Brt Transistor, 50V, 1K/1Kohm, Sot-23-3; Digital Transistor Polarity Onsemi 26K4614
BRT TRANSISTOR, 50V, 1K/1KOHM, SOT-23-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 1K/1KOHM, SOT-23-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Rf, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity Onsemi - 99AC9350 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Rf, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity Onsemi
99AC9350
Transistor, Rf, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity Onsemi 99AC9350
TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm; Resistor RoHS Compliant: Yes

TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm; Resistor RoHS Compliant: Yes

Supplier's Site Datasheet
TRANS PREBIAS NPN 246MW SOT23-3 - 598-MMUN2230LT1G - Utmel Electronic Limited
Hong Kong, China
TRANS PREBIAS NPN 246MW SOT23-3
598-MMUN2230LT1G
TRANS PREBIAS NPN 246MW SOT23-3 598-MMUN2230LT1G
TRANS PREBIAS NPN 246MW SOT23-3

TRANS PREBIAS NPN 246MW SOT23-3

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMUN2230LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMUN2230LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMUN2230LT1G
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors RF Transistors Transistors Bipolar RF Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number MMUN2230LT1G 292-MMUN2230LT1G 1225666-MMUN2230LT1G 488-MMUN2230LT1GCT-ND MMUN2230LT1G 26K4614 99AC9350 598-MMUN2230LT1G MMUN2230LT1G
Product Name SOT-23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2230LT1G Single, Pre-Biased Bipolar Transistors Bipolar Transistors - Pre-Biased Brt Transistor, 50V, 1K/1Kohm, Sot-23-3; Digital Transistor Polarity Onsemi Transistor, Rf, Npn, 50V, 0.1A, Sot-23; Digital Transistor Polarity Onsemi TRANS PREBIAS NPN 246MW SOT23-3 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN NPN NPN; NPN
Package Type SOT23; SOT-23 (TO-236) 3 LEAD SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23 TO-3; SOT23
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape and Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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