onsemi Single, Pre-Biased Bipolar Transistors MMUN2218LT1G

The MMUN2218LT1G is an NPN digital transistor with integrated bias resistors (R1 = 1.0 kΩ, R2 = 10 kΩ) in a SOT-23 package, designed to replace discrete transistor and resistor networks. It supports a maximum collector-emitter voltage of 50 V and continuous collector current of 100 mA. The device dissipates up to 246 mW at 25°C ambient temperature with a thermal resistance of 508 °C/W on a minimum pad. Its DC current gain ranges from 40 to 60 at IC = 5.0 mA, and collector-emitter saturation voltage is ≤ 0.25 V at IC = 10 mA and IB = 1.0 mA. The input voltage for turn-on is between 0.9 V and 1.3 V. The package is Pb-free and RoHS compliant.