onsemi SOT-23 Bipolar Transistor MMUN2217LT1G

Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2217LT1G can be used for catalog matching and distributor lookup.
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Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2217LT1G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
SOT-23 Bipolar Transistor
292-MMUN2217LT1G
SOT-23 Bipolar Transistor 292-MMUN2217LT1G
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2217LT1G can be used for catalog matching and distributor lookup.

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MMUN2217LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2217LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2217LT1G - 036053-MMUN2217LT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2217LT1G
036053-MMUN2217LT1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2217LT1G 036053-MMUN2217LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 036053-MMUN2217LT1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 246mW

Manufacturer: ON Semiconductor
Win Source Part Number: 036053-MMUN2217LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 246mW

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2217LT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2217LT1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MMUN2217LT1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

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Single, Pre-Biased Bipolar Transistors - MMUN2217LT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2217LT1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MMUN2217LT1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2217LT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2217LT1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MMUN2217LT1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

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 - MMUN2217LT1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMUN2217LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMUN2217LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMUN2217LT1G
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Supplier's Site
Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi - 49X8839 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi
49X8839
Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi 49X8839
BRT TRANSISTOR, 50V, 4.7K/10KOHM, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 4.7K/10KOHM, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes

Supplier's Site Datasheet
Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Onsemi - 47X2209 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Onsemi
47X2209
Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Onsemi 47X2209
BRT TRANSISTOR, 50V, 4.7K/10KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:0.47(Ratio) RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 4.7K/10KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:0.47(Ratio) RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MMUN2217LT1G
Bipolar Transistors - Pre-Biased MMUN2217LT1G
Bipolar Transistors - Pre-Biased SS SOT23 BR XSTR NPN 50V

Bipolar Transistors - Pre-Biased SS SOT23 BR XSTR NPN 50V

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 292-MMUN2217LT1G 036053-MMUN2217LT1G MMUN2217LT1GOSDKR-ND MMUN2217LT1G MMUN2217LT1G 49X8839 47X2209 MMUN2217LT1G
Product Name SOT-23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2217LT1G Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi Brt Transistor, 50V, 4.7K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Onsemi Bipolar Transistors - Pre-Biased
Polarity NPN; NPN - Pre-Biased NPN NPN
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; SOT-23 (TO-236) 3 LEAD TO-3; SOT23 TO-3; SOT23
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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