NPN Digital BJT 50V 100mA SOT-23 Transistor Product overview: MMUN2213LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2213LT1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
NPN Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN 50V SOT23-3
Bias Resist Transistor, NPN,MMUN2213LT1G
Bias Resist Transistor, NPN,MMUN2213LT1G
Bias Resist Transistor, NPN,MMUN2213LT1G
Manufacturer: ON Semiconductor
Win Source Part Number: 024089-MMUN2213LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
TRANS PREBIAS NPN 50V SOT23-3
80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23 Digital Transistors ROHS
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1, SOT-23 RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 292-MMUN2213LT1G | MMUN2213LT1GOSDKR-ND | MMUN2213LT1G | MMUN2213LT1G | 464334 | 464334P | 024089-MMUN2213LT1G | MMUN2213LT1G | MMUN2213LT1G | MMUN2213LT1G | 38K5678 |
| Product Name | 50V 100mA SOT-23 Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2213LT1G | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Triode/MOS Tube/Transistor >> Digital Transistors | Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 47 Kohm, 47 Kohm, 1, Sot-23 Rohs Compliant Onsemi | |
| Polarity | NPN | NPN | NPN | NPN - Pre-Biased; NPN | NPN | NPN | NPN; NPN - Pre-Biased | NPN | |||
| IC(max) | 5.00E-4 milliamps | 100 milliamps | 100 milliamps | ||||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||||
| PD | 246 milliwatts | ||||||||||
| TJ | -55 C (-67 F) |
