PNP BJT, 50V, 100mA, SOT-23, Digital Transistor Product overview: MMUN2116LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2116LT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 098693-MMUN2116LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 246mW
PNP Bipolar Digital Transistor (BRT)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
TRANS PREBIAS PNP 50V SOT23-3
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
BIAS RESISTOR TRANSISTOR; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:- RoHS Compliant: Yes
BIAS RESISTOR TRANSISTOR; COLLECTOR EMIT; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:-; Resistor RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 292-MMUN2116LT1G | 098693-MMUN2116LT1G | MMUN2116LT1G | MMUN2116LT1GOSTR-ND | MMUN2116LT1G | MMUN2116LT1G | 26K4610 | 45AJ6154 |
| Product Name | 50V 100mA SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2116LT1G | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - Pre-Biased | Bias Resistor Transistor; Digital Transistor Polarity Onsemi | Bias Resistor Transistor; Collector Emit; Digital Transistor Polarity Onsemi | |
| Polarity | PNP | PNP; PNP - Pre-Biased | PNP | PNP | ||||
| IC(max) | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | ||||||
| VCBO | 50 volts | |||||||
| PD | 246 milliwatts |
