The MMUN2116LT1 is a PNP silicon surface mount transistor with a monolithic bias resistor network, designed to replace discrete transistor and resistor combinations. It is packaged in an SOT-23 case measuring 2.90 mm by 1.30 mm, with a maximum collector current of 100 mA and collector-emitter voltage rating of 50 V. Total device dissipation is 246 mW at 25°C, derating at 2.0 mW/°C above 25°C. The device features a base resistor of 4.7 kΩ and no base-emitter resistor (infinite resistance), enabling high input impedance operation. It meets RoHS standards and is available in Pb-free packaging. Thermal resistance junction-to-ambient is 508 °C/W. The collector-emitter saturation voltage is rated at a maximum of 0.25 V at 10 mA collector current and 1 mA base current.
Small Signal Bipolar Transistor, 0.1A, 50V, PNP, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | MMUN2116LT1 |
| Polarity | PNP |