onsemi Single, Pre-Biased Bipolar Transistors MMUN2114LT1G

Description
TRANS PREBIAS PNP 50V SOT23-3
Request a Quote Datasheet
Description
TRANS PREBIAS PNP 50V SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - MMUN2114LT1G - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
MMUN2114LT1G
Single, Pre-Biased Bipolar Transistors MMUN2114LT1G
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2114LT1G - 024085-MMUN2114LT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2114LT1G
024085-MMUN2114LT1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2114LT1G 024085-MMUN2114LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 024085-MMUN2114LT1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 246mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 024085-MMUN2114LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2114LT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2114LT1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MMUN2114LT1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2114LT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2114LT1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MMUN2114LT1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2114LT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2114LT1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MMUN2114LT1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Brt Transistor, -50V, 47K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi - 10N9517 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, -50V, 47K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi
10N9517
Brt Transistor, -50V, 47K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi 10N9517
BRT TRANSISTOR, -50V, 47K/10KOHM, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; MSL:- RoHS Compliant: Yes

BRT TRANSISTOR, -50V, 47K/10KOHM, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; MSL:- RoHS Compliant: Yes

Supplier's Site
Brt, -50V, 47K/10Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi - 26K4608 - Newark, An Avnet Company
Chicago, IL, United States
Brt, -50V, 47K/10Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi
26K4608
Brt, -50V, 47K/10Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi 26K4608
BRT, -50V, 47K/10KOHM, SOT-23, FULL REEL; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; MSL:- RoHS Compliant: Yes

BRT, -50V, 47K/10KOHM, SOT-23, FULL REEL; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Pre-Biased / Digital Transistor, Brt, -50 V, -100 Ma, 10 Kohm, 47 Kohm, 4.7, Sot-23 Rohs Compliant Onsemi - 90W4496 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Pre-Biased / Digital Transistor, Brt, -50 V, -100 Ma, 10 Kohm, 47 Kohm, 4.7, Sot-23 Rohs Compliant Onsemi
90W4496
Bipolar Pre-Biased / Digital Transistor, Brt, -50 V, -100 Ma, 10 Kohm, 47 Kohm, 4.7, Sot-23 Rohs Compliant Onsemi 90W4496
Bipolar Pre-Biased / Digital Transistor, BRT, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7, SOT-23 RoHS Compliant: Yes

Bipolar Pre-Biased / Digital Transistor, BRT, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7, SOT-23 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMUN2114LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMUN2114LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMUN2114LT1G
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MMUN2114LT1G 024085-MMUN2114LT1G MMUN2114LT1GOSDKR-ND 10N9517 26K4608 90W4496 MMUN2114LT1G
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2114LT1G Single, Pre-Biased Bipolar Transistors Brt Transistor, -50V, 47K/10Kohm, Sot-23; Digital Transistor Polarity Onsemi Brt, -50V, 47K/10Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi Bipolar Pre-Biased / Digital Transistor, Brt, -50 V, -100 Ma, 10 Kohm, 47 Kohm, 4.7, Sot-23 Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP - Pre-Biased; PNP PNP; PNP - Pre-Biased PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23 TO-3; SOT23 TO-3; SOT23
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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