PNP Digital BJT Transistor 50V 100mA SOT-23 Product overview: MMUN2113LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2113LT1G can be used for catalog matching and distributor lookup.
Transistor Digital PNP 50V 100mA SOT-23
Transistor Digital PNP 50V 100mA SOT-23
Transistor Digital PNP 50V 100mA SOT-23
PNP Bipolar Digital Transistor (BRT)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Manufacturer: ON Semiconductor
Win Source Part Number: 036043-MMUN2113LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
BRT TRANSISTOR, 50VDC, 47K/47K, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes
TRANS PREBIAS PNP 50V SOT23-3
TRANS PREBIAS PNP 50V SOT23-3
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 292-MMUN2113LT1G | 6900139P | 6900139 | MMUN2113LT1G | MMUN2113LT1GOSDKR-ND | 036043-MMUN2113LT1G | MMUN2113LT1G | 45J1617 | 51X6042 | MMUN2113LT1G | MMUN2113LT1G |
| Product Name | 50V 100mA SOT-23 Bipolar Transistor | Bipolar Transistors | Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2113LT1G | Bipolar Transistors - Pre-Biased | Brt Transistor, 50V, 47K/47Kohm, Sot-23; Digital Transistor Polarity Onsemi | Brt Transistor, 50Vdc, 47K/47K, Sot-23; Digital Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single, Pre-Biased Bipolar Transistors | |
| Polarity | PNP | PNP | PNP | PNP | PNP | PNP; PNP - Pre-Biased | PNP - Pre-Biased; PNP | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||||
| PD | 246 milliwatts | ||||||||||
| TJ | -55 C (-67 F) |
