onsemi 50V 100mA SOT-23 Bipolar Transistor MMUN2112LT1G

Description
PNP BJT Transistor, 50V, 100mA, SOT-23 Product overview: MMUN2112LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2112LT1G can be used for catalog matching and distributor lookup.
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Description
PNP BJT Transistor, 50V, 100mA, SOT-23 Product overview: MMUN2112LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2112LT1G can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The BRT Transistor, part number 45J1616, is a PNP digital transistor designed to simplify circuit design by integrating a monolithic bias resistor network consisting of two resistors (22 kOc each) into a single device. It features a maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 50V, with a continuous collector current rating of 100mA. The transistor is housed in a SOT-23 package and is RoHS compliant, making it suitable for various applications, including automotive, as it meets AEC-Q101 qualification standards. The integration of the bias resistors reduces component count and board space, potentially lowering system costs.

Datasheet Summary
Powered by GS/AI

The BRT Transistor, part number 45J1616, is a PNP digital transistor designed to simplify circuit design by integrating a monolithic bias resistor network consisting of two resistors (22 kOc each) into a single device. It features a maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 50V, with a continuous collector current rating of 100mA. The transistor is housed in a SOT-23 package and is RoHS compliant, making it suitable for various applications, including automotive, as it meets AEC-Q101 qualification standards. The integration of the bias resistors reduces component count and board space, potentially lowering system costs.

Suppliers

Company
Product
Description
Supplier Links
Singapore
50V 100mA SOT-23 Bipolar Transistor
292-MMUN2112LT1G
50V 100mA SOT-23 Bipolar Transistor 292-MMUN2112LT1G
PNP BJT Transistor, 50V, 100mA, SOT-23 Product overview: MMUN2112LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2112LT1G can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 50V, 100mA, SOT-23 Product overview: MMUN2112LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2112LT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2112LT1G - 024084-MMUN2112LT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2112LT1G
024084-MMUN2112LT1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2112LT1G 024084-MMUN2112LT1G
Manufacturer: ON Semiconductor Win Source Part Number: 024084-MMUN2112LT1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 246mW

Manufacturer: ON Semiconductor
Win Source Part Number: 024084-MMUN2112LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 246mW

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2112LT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2112LT1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MMUN2112LT1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2112LT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2112LT1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MMUN2112LT1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MMUN2112LT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MMUN2112LT1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MMUN2112LT1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

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 - MMUN2112LT1G - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 50V, PNP, TO-236AB

Small Signal Bipolar Transistor, 0.1A, 50V, PNP, TO-236AB

Supplier's Site Datasheet
Brt Transistor, 50V, 22K/22Kohm, Sot-23; Digital Transistor Polarity Onsemi - 45J1616 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 22K/22Kohm, Sot-23; Digital Transistor Polarity Onsemi
45J1616
Brt Transistor, 50V, 22K/22Kohm, Sot-23; Digital Transistor Polarity Onsemi 45J1616
BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-23; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes

Supplier's Site Datasheet
Brt Transistor, 50V, 22K/22Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi - 85W3167 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 22K/22Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi
85W3167
Brt Transistor, 50V, 22K/22Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi 85W3167
BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-23, FULL REEL; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohmRoHS Compliant: Yes

BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-23, FULL REEL; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohmRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMUN2112LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMUN2112LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMUN2112LT1G
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MMUN2112LT1G
Bipolar Transistors - Pre-Biased MMUN2112LT1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Rochester Electronics Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-MMUN2112LT1G 024084-MMUN2112LT1G MMUN2112LT1GOSCT-ND MMUN2112LT1G 45J1616 85W3167 MMUN2112LT1G MMUN2112LT1G
Product Name 50V 100mA SOT-23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2112LT1G Single, Pre-Biased Bipolar Transistors Brt Transistor, 50V, 22K/22Kohm, Sot-23; Digital Transistor Polarity Onsemi Brt Transistor, 50V, 22K/22Kohm, Sot-23, Full Reel; Digital Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased
Polarity PNP PNP; PNP - Pre-Biased PNP PNP
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 246 milliwatts
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