Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL Product overview: MMUN2111LT3G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MMUN2111LT3G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 725350-MMUN2111LT3G
Packaging: Reel
Mounting Style: SMD
Transistor Type: PNP - Pre-Biased
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3 (TO-236)
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Family Part Number: MMUN21**L
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 35 at 5mA, 10V
Maximum Power: 246mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
TRANS PREBIAS PNP 50V SOT23-3
BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | MMUN2111LT3GOSCT-ND | 292-MMUN2111LT3G | 725350-MMUN2111LT3G | MMUN2111LT3G | 45J1615 |
| Product Name | Single, Pre-Biased Bipolar Transistors | SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2111LT3G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 10K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Onsemi |
| Polarity | PNP | PNP | PNP | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23 | TO-3; SOT23 | ||
| IC(max) | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts | |||
| PD | 246 milliwatts |
