onsemi Single Bipolar Transistors MMJT9435T1G

Description
Bipolar (BJT) Transistor PNP 30V 3A 110MHz 3W Surface Mount SOT-223 (TO-261)
  • Single Bipolar Transistors - MMJT9435T1GOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MMJT9435T1G - 102022-MMJT9435T1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMJT9435T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP 30V 3A 110MHz 3W Surface Mount SOT-223 (TO-261)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - MMJT9435T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MMJT9435T1GOSTR-ND
Single Bipolar Transistors MMJT9435T1GOSTR-ND
Bipolar (BJT) Transistor PNP 30V 3A 110MHz 3W Surface Mount SOT-223 (TO-261)

Bipolar (BJT) Transistor PNP 30V 3A 110MHz 3W Surface Mount SOT-223 (TO-261)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MMJT9435T1G - 102022-MMJT9435T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMJT9435T1G
102022-MMJT9435T1G
TRANSISTORS - Transistors (BJT) - Single - MMJT9435T1G 102022-MMJT9435T1G
Manufacturer: ON Semiconductor Win Source Part Number: 102022-MMJT9435T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 110MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 550mV @ 300mA, 3A Typical Gain (hFE) (Min): 125 @ 800mA, 1V Maximum Power Dissipation: 3W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 102022-MMJT9435T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 110MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 550mV @ 300mA, 3A
Typical Gain (hFE) (Min): 125 @ 800mA, 1V
Maximum Power Dissipation: 3W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMJT9435T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMJT9435T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMJT9435T1G
TRANS PNP 30V 3A SOT223

TRANS PNP 30V 3A SOT223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MMJT9435T1GOSTR-ND 102022-MMJT9435T1G MMJT9435T1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MMJT9435T1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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