onsemi Single Bipolar Transistors MMDJ3N03BJTR2

The MMDJ3N03BJT is a dual NPN silicon power transistor in an SO-8 surface mount package measuring 5.00 mm by 4.00 mm with a height of 1.75 mm. It has a collector-emitter voltage rating of 30 Vdc, a continuous collector current of 3.0 Adc, and a peak collector current of 5.0 Adc. The minimum DC current gain is 60 at 3.0 Adc collector current, and the maximum collector-emitter saturation voltage is 0.45 Vdc at 3.0 Adc. The base-emitter saturation voltage is 1.25 Vdc at 3.0 Adc collector current and 0.3 Adc base current. The device operates over a junction temperature range of -55°C to +150°C, with a maximum soldering temperature of 260°C. Thermal resistance is 100°C/W on a 1" square FR-4 board and 185°C/W on a 0.012" square FR-4 board. The transistor complies with RoHS standards.