onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDFS6N303R2 MMDFS6N303R2

Manufacturer: ON Semiconductor
Win Source Part Number: 059213-MMDFS6N303R2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 31.4nC @ 10V
Max Input Capacitance: 600pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 10V

MOSFET N-CH 30V 6A 8-SOIC Product overview: MMDFS6N303R2 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-MMDFS6N303R2 can be used for catalog matching and distributor lookup.