onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDFS6N303R2 MMDFS6N303R2

Description
Manufacturer: ON Semiconductor Win Source Part Number: 059213-MMDFS6N303R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 31.4nC @ 10V Max Input Capacitance: 600pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 10V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 059213-MMDFS6N303R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 31.4nC @ 10V Max Input Capacitance: 600pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 10V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDFS6N303R2 - 059213-MMDFS6N303R2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDFS6N303R2
059213-MMDFS6N303R2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDFS6N303R2 059213-MMDFS6N303R2
Manufacturer: ON Semiconductor Win Source Part Number: 059213-MMDFS6N303R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 31.4nC @ 10V Max Input Capacitance: 600pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 059213-MMDFS6N303R2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 31.4nC @ 10V
Max Input Capacitance: 600pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 10V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 059213-MMDFS6N303R2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDFS6N303R2
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2000 milliwatts
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