onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N04HDR2G MMDF3N04HDR2G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 116901-MMDF3N04HDR2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 1.39W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 900pF @ 32V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.4A, 10V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 116901-MMDF3N04HDR2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 1.39W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 900pF @ 32V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.4A, 10V
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N04HDR2G - 116901-MMDF3N04HDR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N04HDR2G
116901-MMDF3N04HDR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N04HDR2G 116901-MMDF3N04HDR2G
Manufacturer: ON Semiconductor Win Source Part Number: 116901-MMDF3N04HDR2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 1.39W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 900pF @ 32V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.4A, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 116901-MMDF3N04HDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 1.39W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 900pF @ 32V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.4A, 10V

Buy Now Datasheet
Singapore
N-Channel Dual 40V 3.4A MOSFET Transistor
289-MMDF3N04HDR2G
N-Channel Dual 40V 3.4A MOSFET Transistor 289-MMDF3N04HDR2G
Power MOSFET 40V 3.4A 80 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: MMDF3N04HDR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 40V, 3.4A, 80 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-MMDF3N04HDR2G can be used for catalog matching and distributor lookup.

Power MOSFET 40V 3.4A 80 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: MMDF3N04HDR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 40V, 3.4A, 80 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-MMDF3N04HDR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - MMDF3N04HDR2G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
MMDF3N04HDR2G
FET, MOSFET Arrays MMDF3N04HDR2G
MOSFET 2N-CH 40V 3.4A 8-SOIC

MOSFET 2N-CH 40V 3.4A 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - MMDF3N04HDR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
MMDF3N04HDR2GOSTR-ND
FET, MOSFET Arrays MMDF3N04HDR2GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 40V 3.4A 1.39W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 3.4A 1.39W Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MMDF3N04HDR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMDF3N04HDR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMDF3N04HDR2G
MOSFET 2N-CH 40V 3.4A 8SOIC

MOSFET 2N-CH 40V 3.4A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 116901-MMDF3N04HDR2G 289-MMDF3N04HDR2G MMDF3N04HDR2G MMDF3N04HDR2GOSTR-ND MMDF3N04HDR2G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N04HDR2G N-Channel Dual 40V 3.4A MOSFET Transistor FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 40 volts 40 volts
PD 1390 milliwatts 1390 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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