onsemi Single FETs, MOSFETs MMDF3N02HDR2G

Description
N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MMDF3N02HDR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MMDF3N02HDR2GOSTR-ND
Single FETs, MOSFETs MMDF3N02HDR2GOSTR-ND
N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC

N-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N02HDR2G - 1078377-MMDF3N02HDR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N02HDR2G
1078377-MMDF3N02HDR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N02HDR2G 1078377-MMDF3N02HDR2G
Manufacturer: ON Semiconductor Win Source Part Number: 1078377-MMDF3N02HDR2 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.8A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 630pF @ 16V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 90 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1078377-MMDF3N02HDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 630pF @ 16V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MMDF3N02HDR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MMDF3N02HDR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MMDF3N02HDR2G
MOSFET N-CH 20V 3.8A 8SOIC

MOSFET N-CH 20V 3.8A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MMDF3N02HDR2GOSTR-ND 1078377-MMDF3N02HDR2G MMDF3N02HDR2G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMDF3N02HDR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC 630 pF @ 16 V
V(BR)DSS 20 volts
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